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QS6U22
Transistors
Small switching (-20V, -1.5A)
QS6U22
!Features 1) The QS6U22 combines Pch MOSFET with a Schottky barrier diode in a single TSMT6 package. 2) Pch Treueh MOSFET have a low on-state resistance with a fast switching. 3) Nch Treueh MOSFET is reacted a low voltage drive (4V). 4) The Independently connected Schottky barrier diode have a low forward voltage. !External dimensions (Unit : mm)
TSMT6
1pin mark
(1)
2.8 1.6
(6)
0.4
(3)
0.16
(4)
Each lead has same dimensions
Abbreviated symbol : U22
!Applications Load switch, DC / DC conversion !Structure Silicon P-channel MOSFET Schottky Barrier DIODE
!Equivalent circuit
(6) (5) (4)
!Packaging specifications
Package Type QS6U22 Code Basic ordering unit (pieces) Taping TR 3000
(1)
2
0.85
1 (2) (3)
1 ESD PROTECTION DIODE 2 BODY DIODE
(1) Anode (2) Source (3) Gate (4) Drain (5) N / C (6) Cathode
A protection diode has been in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded.
!Absolute maximum ratings (Ta=25C)
MOSFET Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Channel temperature Di Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature MOSFET AND Di Parameter Total power dissipation Range of Storage temperature Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP Tch Symbol VRM VR IF IFSM Tj Symbol PD Tstg Limits -20 12 1.5 6.0 -0.75 -6.0 150 Limits 25 20 0.7 3.0 150 Limits 1.25 -55 to +150 Unit V V A A A A C Unit V V A A C Unit W / Total C
1 1
2
3
1 Pw10s, Duty cycle1% 2 60Hz1cyc. 3 Total mounted on a ceramic board
2.9
(2)
(5)
1/3
QS6U22
Transistors
!Electrical characteristics (Ta=25C)
MOSFET Parameter Symbol Min. IGSS - Gate-source leakage Drain-source breakdown voltage V(BR) DSS -20 Zero gate voltage drain current IDSS - VGS (th) -0.7 Gate threshold voltage - Static drain-source on-state RDS (on) - resistance - 1.0 Yfs Forward transfer admittance Ciss - Input capacitance Coss Output capacitance - Reverse transfer capacitance Crss - Turn-on delay time td (on) - Rise time tr - Turn-off delay time td (off) - Fall time tf - Total gate charge - Qg Gate-source charge Qgs - Gate-drain charge Qgd - Typ. - - - - 155 170 310 - 270 40 35 10 12 45 20 3.0 0.8 0.85 Max. 10 - -1 -2.0 215 235 430 - - - - - - - - - - - Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=12V, VDS=0V ID= -1mA, VGS=0V VDS= -20V, VGS=0V VDS= -10V, ID= -1mA ID= -1.5A, VGS= -4.5V ID= -1.5A, VGS= -4V ID= -0.75A, VGS= -2.5V VDS= -10V, ID= -0.75A VDS= -10V VGS=0V f=1MHz ID= -0.75A VDD -15V VGS= -4.5V RL=20 RG=10 VDD -15V VGS= -4.5V RL=10 / RG=10 ID= -1.5A

Pulsed
!Body diode (Source-drain)
MOSFET Parameter Forward voltage Di Parameter Forward voltage drop Reverse leakage Symbol VSD Symbol VF IR Min. - Min. - - Typ. - Typ. - - Max. -1.2 Max. 0.49 200 Unit V Unit V A Conditions IS= -0.75A, VGS=0V Conditions IF=0.7A VR=20V
!Electrical characteristic curves
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
VDS= -10V Pulsed
VGS= -10V Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
10
10000
10000
VGS= -4.5V Pulsed
DRAIN CURRENT : -ID (A)
1
Ta=125C Ta=75C Ta=25C Ta= -25C
0.1
1000
Ta=125C Ta=75C Ta=25C Ta= -25C
1000
Ta=125C Ta=75C Ta=25C Ta= -25C
0.01
0.001
1
1.5
2
2.5
3
3.5
4
4.5
5
100 0.1
1
10
100 0.1
1
10
GATE-SOURCE VOLTAGE : -VGS (V)
DRAIN CURRENT : -ID (A)
DRAIN CURRENT : -ID (A)
Fig.1 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
Fig.2 Static Drain-Source On-State Resistance vs. Drain Current ()
1100 1000 900 800 700 600 500 400 300 200 0 2 4 6 8 10 12 14 16
ID= -1.2A ID= -0.6A
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current ()
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
10000 Ta=25C Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
10000
VGS= -4V Pulsed
1200 Ta=25C Pulsed
1000
Ta=125C Ta=75C Ta=25C Ta= -25C
1000
VGS= -4.0V VGS= -4.5V VGS= -10V
100 0.1
1
10
100 0.1
1
10
DRAIN CURRENT : -ID (A)
GATE-SOURCE VOLTAGE : -VGS (V)
DRAIN CURRENT : -ID (A)
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ()
Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current ( )
2/3
QS6U22
Transistors
10
1000 VGS=0V Pulsed
REVERSE DRAIN CURRENT : -IS (A)
Ta=25C f=1MHz VGS=0V
1000
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
1
Ta=125C Ta=75C Ta=25C Ta= -25C
100
Ta=25C VDD= -15V VGS= -10A RG=10 Pulsed
tf td (off)
10
100
Ciss
0.1
td (on) tr
Coss Crss
0.01 0.0
0.5
1
1.5
2
10 0.01
0.1
1
10
100
1 0.01
0.1
1
10
SOURCE-DRAIN VOLTAGE : -VSD (V)
DRAIN-SOURCE VOLTAGE : -VDS (V)
DRAIN CURRENT : -ID (A)
Fig.7 Reverse Drain Current vs. Source-Drain Voltage
8
Fig.8 Typical Capacitance vs. Drain-Source Voltage
Fig.9 Switching Characteristics
GATE-SOURCE VOLTAGE : VGS (V)
7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1
Ta=25C VDD= -15V ID= -1.2A RG=10 Pulsed
1.2 1.4 1.6 1.8
2
TOTAL GATE CHARGE : Qg (nC)
Fig.10 Dynamic Input Characteristics
!Measurement circuits
Pulse Width
VGS ID RL D.U.T. RG VDD VDS
VGS
10% 50% 10%
90%
50% 10% 90%
VDS
90% td(on) ton tr td(off) toff
tr
Fig.11 Switching Time Measurement Circuit
Fig.12 Switching Waveforms
VG
VGS
ID RL
VDS
Qg VGS Qgs Qgd
IG(Const) D.U.T. RG VDD
Charge
Fig.13 Gate Charge Measurement Circuit
Fig.14 Gate Charge Waveform
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0

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